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| MMBTA42 High-Voltage NPN Transistor Surface Mount COLLECTOR 3 SOT-23 3 1 1 BASE 2 EMITTER 2 Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 300 300 5.0 500 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R JA PD R JA TJ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C Device Marking MMBTA42=1D Electrical Characteristics Off Characteristics (TA=25 C Unless Otherwise noted) Symbol Min Max Unit Characteristics Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=100 Adc, IE=0) Emitter-Base Breakdown Voltage (IE=10 Adc, IC=0) Base Cutoff Current (VCB=200 Vdc, IE=0) Emitter Cutoff Current VEB=3V, IC=0 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3.Pulse Test:Pulse Width 300 S, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 5.0 0.25 0.1 Vdc Vdc Vdc Adc Adc - WEITRON http://www.weitron,com.tw MMBTA42 Electrical Characteristics (TA=25 Characteristics C unless otherwise noted) (Countinued) Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= 1.0 mAdc, VCE=10Vdc) (IC= 10 mAdc, VCE= 10Vdc) (IC= 30 mAdc, VCE= 10Vdc) Collector-Emitter Saturation Voltage(3) (IC= 20 mAdc, IB= 2.0 mAdc) Base-Emitter Saturation Voltage (3) (IC= 20 mAdc, IB= 2.0 mAdc) Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 5 Vdc, f=130MHz) HFE(1) HFE(2) HFE(3) VCE(sat) VBE(sat) 25 100 25 - 200 0.5 0.9 - Vdc Vdc - fT -50 - MHz WEITRON http://www.weitron.com.tw MMBTA42 Typical Characteristics 120 hFE, DC CURRENT GAIN WE IT R ON 100 80 60 40 20 0 0.1 Tj=+125 C 25 C -55 C Figure ,1 DC Current Gain 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (mA) 10 100 1.0 0.8 0.6 0.4 0.2 00 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat)@25 C, ICIB = 10 VCE(sat)@125 C, ICIB =10 VCE(sat)@ -55 C, ICIB=10 VBE(sat)@25 C, ICIB = 10 VBE(sat)@125 C, ICIB =10 VBE(sat)@ -55 C, ICIB =10 VBE(on)@25 C, VCE = 10V VBE(on)@125 C, VCE = 10V VBE(on)@-55 C, VCE = 10V Figure,2 "On"Voltages fT, CURRENT-GAIN-BANDWIDTH (MHz) 80 70 60 50 40 30 20 10 1.0 2.0 3.0 Tj=25 C VEC=20V f=20MHz 5.0 7.0 10 20 30 50 70 100 Ic, COLLECTOR CURRENT (mA) Figure ,3 Current-Gain-Bandwidth WEITRON http://www.weitron.com.tw MMBTA42 SOT-23 Package Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw |
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